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Cluster Tool for In Situ Processing and Comprehensive Characterization of Thin Films at High Temperatures
Robert Wenisch1, Frank Lungwitz1, Daniel Hanf1
1Helmholtz-Zentrum Dresden-Rossendorf , Bautzner Landstr. 400 , 01328 Dresden , Germany.
Abstract:
A new cluster tool for in situ real-time processing and depth-resolved compositional, structural and optical characterization of thin films at temperatures from -100 to 800 °C is described. The implemented techniques comprise magnetron sputtering, ion irradiation, Rutherford backscattering spectrometry, Raman spectroscopy, and spectroscopic ellipsometry. The capability of the cluster tool is demonstrated for a layer stack MgO/amorphous Si (∼60 nm)/Ag (∼30 nm), deposited at room temperature and crystallized with partial layer exchange by heating up to 650 °C. Its initial and final composition, stacking order, and structure were monitored in situ in real time and a reaction progress was defined as a function of time and temperature.
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