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Carrier Lifetime Measurements in Semiconductors through the Microwave Photoconductivity Decay Method
Published on: April 18, 2019
Integrating sphere based reflectance measurements for small-area semiconductor samples
S Saylan1, C T Howells1, M S Dahlem1
1Masdar Institute, Khalifa University of Science and Technology, Abu Dhabi, United Arab Emirates.
Abstract:
This article describes a method that enables reflectance spectroscopy of small semiconductor samples using an integrating sphere, without the use of additional optical elements. We employed an inexpensive sample holder to measure the reflectance of different samples through 2-, 3-, and 4.5-mm-diameter apertures and applied a mathematical formulation to remove the bias from the measured spectra caused by illumination of the holder. Using the proposed method, the reflectance of samples fabricated using expensive or rare materials and/or low-throughput processes can be measured. It can also be incorporated to infer the internal quantum efficiency of small-area, research-level solar cells. Moreover, small samples that reflect light at large angles and develop scattering may also be measured reliably, by virtue of an integrating sphere insensitive to directionalities.
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