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Pitfall of the Strongest Cells in Static Random Access Memory Physical Unclonable Functions
Mingyang Gong1, Hailong Liu2, Run Min3
1School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China. d201677550@hust.edu.cn.
Abstract:
Static Random Access Memory (SRAM) Physical Unclonable Functions (PUFs) are some of the most popular PUFs that provide a highly-secured solution for secret key storage. Given that PUF responses are noisy, the key reconstruction must use error correcting code (ECC) to reduce the noise. Repetition code is widely used in resource constrained systems as it is concise and lightweight, however, research has shown that repetition codes can lead to information leakage. In this paper we found that the strongest cell distribution in a SRAM array may leak information of the responses of SRAM PUF when the repetition code is directly applied. Experimentally, on an ASIC platform with the HHGRACE 0.13 μm process, we recovered 8.3% of the measured response using the strongest cells revealed by the helper data, and we finally obtained a clone response 79% similar to weak response using the public helper data. We therefore propose Error Resistant Fuzzy Extractor (ERFE), a 4-bit error tolerant fuzzy extractor, that extracts the value of the sum of the responses as a unique key and reduces the failure rate to 1.8 × 10-8 with 256 bit entropy.
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