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Updated: Feb 9, 2026

Characterization of Surface Modifications by White Light Interferometry: Applications in Ion Sputtering, Laser Ablation, and Tribology Experiments
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Ion Sputter Induced Interfacial Reaction in Prototypical Metal-GaN System.

Rong Huang1, Fangsen Li2, Tong Liu1

  • 1Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou, 215123, China.

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|June 6, 2018
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Summary
This summary is machine-generated.

Energetic ion sputtering of metal/GaN contacts reveals unexpected by-products. This study identified metallic Ga and TiCx formation, cautioning that sputter depth profiles may be altered by these reactions.

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Area of Science:

  • Materials Science
  • Surface Science
  • Semiconductor Physics

Background:

  • Contact properties are critical for high-performance GaN-based devices.
  • Energetic ion sputtering is commonly used for metal/GaN contact analysis.
  • Ion-induced interfacial reactions and by-product formation remain poorly understood.

Purpose of the Study:

  • To investigate ion-induced interfacial reactions and by-product formation during sputter profiling of metal/GaN contacts.
  • To clarify the chemical state changes and by-products at the interface.
  • To provide insights into the reliability of sputter depth profiling techniques.

Main Methods:

  • Combined in-situ X-ray photoelectron spectroscopy (XPS) and ex-situ high-resolution transmission electron microscopy (HRTEM).
  • Utilized Ar+ ion sputtering for interface probing.
  • Studied the prototypical Ti/GaN system.

Main Results:

  • Observed ion-induced chemical state changes at the interface.
  • Identified the formation of a metallic Ga layer at the GaOx/GaN interface for the first time.
  • Detected TiCx components at the Ti/GaOx interface due to reactions with adsorbed carbon species.

Conclusions:

  • Ion bombardment during sputter depth profiling can induce significant interfacial reactions and by-product formation.
  • The presence of metallic Ga and TiCx alters the interface composition.
  • Results necessitate caution when interpreting core level binding energies and peak intensities from sputter depth profiles.