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Modified MXene: promising electrode materials for constructing Ohmic contacts with MoS2 for electronic device
Pei Zhao1, Hao Jin, Xingshuai Lv
1School of Physics, State Key Laboratory of Crystal Materials, Shandong University, 250100 Jinan, People's Republic of China. yandong.ma@sdu.edu.cn daiy60@sina.com.
Researchers explored MXene materials for molybdenum disulfide (MoS2) electronic devices. Ta2C(OH)2 and Ta2CF2 MXenes show promise for Ohmic contacts in field-effect transistors (FETs), improving device performance.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Developing efficient molybdenum disulfide (MoS2)-based electronic devices requires suitable electrode materials for Ohmic contacts.
- MXene materials are emerging as potential candidates for electrodes in advanced electronic applications.
Purpose of the Study:
- To investigate pristine and modified MXene (Ta2C, Ta2CF2, Ta2C(OH)2) monolayers as electrode materials for MoS2.
- To evaluate the contact properties and transport characteristics of MoS2-based field-effect transistors (FETs) using these MXene electrodes.
Main Methods:
- Density functional theory (DFT) calculations.
- Non-equilibrium Green's function (NEGF) simulations.
- Transport property simulations of two-probe field-effect transistors (FETs).
Main Results:
- Chemical bonding and strong orbital hybridization were observed at the MoS2/Ta2C interface.
- Ohmic contacts were achieved with MoS2/Ta2C, MoS2/Ta2CF2, and MoS2/Ta2C(OH)2 interfaces.
- Ta2CF2 and Ta2C(OH)2 electrodes formed Ohmic contacts, while Ta2C formed an n-type Schottky barrier.
- FETs with MoS2/Ta2C(OH)2 electrodes exhibited half the resistance of those with MoS2/Ta2CF2 electrodes.
Conclusions:
- Ta2CF2 and Ta2C(OH)2 MXene monolayers are promising electrode materials for achieving Ohmic contacts with MoS2 in FETs.
- The use of small-molecule fragments as buffer layers can effectively facilitate Ohmic contacts between metal electrodes and semiconductors.
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