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Updated: Feb 9, 2026

Fabrication of Robust Nanoscale Contact between a Silver Nanowire Electrode and CdS Buffer Layer in CuIn,GaSe2 Thin-film Solar Cells
Published on: July 19, 2019
Formation of Cl-Doped ZnO Thin Films by a Cathodic Electrodeposition for Use as a Window Layer in CIGS Solar Cells
Jianping Ao1, Rui Fu2, Ming-Jer Jeng3,4
1Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, China. aojp@nankai.edu.cn.
Abstract:
Zinc oxide films that are prepared by radio frequency (RF) sputtering are widely used as window layers in copper indium gallium diselenide (CIGS) solar cells. To reduce their production cost, the electrodeposition method for preparing Cl-doped zinc oxide (ZnO:Cl), rather than sputtering, was studied. The electrodeposition parameters of injected current density and the pH of the electrolyte solution were studied. A moderate current density was used to yield high quality zinc oxides. The pH of the electrolyte greatly affected the formation of ZnO films. The pH value of the electrolyte that ensured that zinc oxides of high quality are obtained was close to seven. Electrodeposited ZnO:Cl films had higher transmittance than ZnO:Al films in the near-infrared region and so they can be used to improve the performance of solar cells. Our experiments revealed that the CIGS solar cells with electrodeposited ZnO:Cl films as a window layer were slightly more efficient than those with sputtered ZnO:Al films.
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