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Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
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Gate-Controlled Graphene-Silicon Schottky Junction Photodetector.
Kyoung Eun Chang1, Tae Jin Yoo1, Cihyun Kim1
1School of Materials Science and Engineering, Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Gwangju, 500-712, Republic of Korea.
Small (Weinheim an Der Bergstrasse, Germany)
|June 8, 2018
Summary
This study introduces a novel graphene-silicon photodetector with high photoresponsivity and low dark current. This advancement offers superior performance compared to existing technologies for sensitive light detection.
Area of Science:
- Optoelectronics
- Materials Science
- Semiconductor Physics
Background:
- High photoresponsivity in photodetectors often comes with amplified dark current.
- Existing photodetector technologies face limitations in balancing sensitivity and noise.
Purpose of the Study:
- To develop a gate-controlled graphene-silicon Schottky junction photodetector.
- To achieve high photoresponsivity and an excellent on/off photoswitching ratio while minimizing dark current.
Main Methods:
- Fabrication of a gate-controlled graphene-silicon Schottky junction.
- Characterization of photodetector performance across a wide wavelength range (395-850 nm).
Main Results:
- Demonstrated high on/off photoswitching ratio (≈10^4).
- Achieved very high photoresponsivity (≈70 A W^-1), ~100x higher than commercial devices.
- Maintained low dark current (µA cm^-2), comparable to or lower than commercial photodetectors.
Conclusions:
- The novel photodetector design overcomes the trade-off between photoresponsivity and dark current.
- A unique gain mechanism, attributed to differing carrier transport in silicon and graphene, explains the enhanced performance.
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