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Updated: Feb 9, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Gate-Controlled Graphene-Silicon Schottky Junction Photodetector
Kyoung Eun Chang1, Tae Jin Yoo1, Cihyun Kim1
1School of Materials Science and Engineering, Center for Emerging Electronic Devices and Systems, Gwangju Institute of Science and Technology, Gwangju, 500-712, Republic of Korea.
Abstract:
Various photodetectors showing extremely high photoresponsivity have been frequently reported, but many of these photodetectors could not avoid the simultaneous amplification of dark current. A gate-controlled graphene-silicon Schottky junction photodetector that exhibits a high on/off photoswitching ratio (≈104 ), a very high photoresponsivity (≈70 A W-1 ), and a low dark current in the order of µA cm-2 in a wide wavelength range (395-850 nm) is demonstrated. The photoresponsivity is ≈100 times higher than that of existing commercial photodetectors, and 7000 times higher than that of graphene-field-effect transistor-based photodetectors, while the dark current is similar to or lower than that of commercial photodetectors. This result can be explained by a unique gain mechanism originating from the difference in carrier transport characteristics of silicon and graphene.
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