O-band DFB laser heterogeneously integrated on a bulk-silicon platform

Area of Science:

• Photonics and Semiconductor Devices
• Materials Science

Background:

• Silicon photonics is crucial for semiconductor products.
• O-band lasers are essential for optical communications.
• Heterogeneous integration challenges exist for III/V devices on silicon.

Purpose of the Study:

• To present an O-band distributed feedback (DFB) laser integrated on a bulk-silicon platform.
• To demonstrate high efficiency and stable operation of the integrated laser.
• To expand the optical device library for silicon platforms.

Main Methods:

• Heterogeneous integration of a III/V active region onto a bulk-silicon substrate.
• Design and fabrication of an O-band DFB laser.
• Characterization of laser performance including wall plug efficiency, temperature stability, and side-mode suppression ratio.

Main Results:

• Achieved a wall plug efficiency exceeding 8% up to 70°C.
• Demonstrated stable single-mode operation over a wide current range.
• Maintained a side-mode suppression ratio greater than 45dB.
• Efficient heat dissipation from the III/V active region to the silicon platform.

Conclusions:

• The developed O-band DFB laser is a significant addition to the silicon photonics device library.
• High efficiency and stable operation at elevated temperatures are achieved through effective thermal management.
• This integration advances the capability of bulk-silicon platforms for optical applications.