Wavelength-Controlled Photodetector Based on Single CdSSe Nanobelt

Area of Science:

• Materials Science
• Nanotechnology
• Optoelectronics

Background:

• Semiconductor nanostructures are crucial for advanced electronic and optoelectronic devices.
• Cadmium Sulfide Selenide (CdSSe) nanobelts offer unique properties for potential applications.
• Understanding defect impacts is vital for optimizing nanodevice performance.

Purpose of the Study:

• To synthesize and characterize defect-free CdSSe nanobelts.
• To develop a single CdSSe nanobelt-based photodetector.
• To investigate the photoelectric properties and performance of the developed photodetector.

Main Methods:

• Synthesis of CdSSe nanobelts via thermal evaporation.
• Characterization using SEM, XRD, TEM, HRTEM, XPS, PL, and CL.
• Fabrication and testing of a single CdSSe nanobelt photodetector.

Main Results:

• CdSSe nanobelts exhibited excellent morphology and microstructure without defects.
• Cathodoluminescence (CL) identified defect-free nanobelts suitable for detector fabrication.
• The photodetector showed a high photocurrent-to-dark current ratio (816), spectral responsivity (10.4 AW⁻¹), and EQE (19.1%).
• Fast response times (rise/decay of 1.62/4.70 ms) were achieved.

Conclusions:

• Defect-free CdSSe nanobelts are suitable for high-performance photodetector applications.
• The developed photodetector demonstrates significant potential for optoelectronic devices.
• Compositional tuning of CdSSe offers a strategy for designing wavelength-controlled photodetectors.