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Bulk and Thin Film Synthesis of Compositionally Variant Entropy-stabilized Oxides
Published on: May 29, 2018
Swelling as a stabilizing mechanism in irradiated thin films
Jennifer M Swenson1, Scott A Norris1
1Department of Mathematics, Southern Methodist University, Dallas, TX 75275, United States of America.
None:
Irradiation of semiconductor surfaces often leads to the spontaneous formation of rippled structures at certain irradiation angles. However, at high enough energies, in the keV range, these structures are sometimes observed to vanish for all angles, despite the absence of any identified, universally-stabilizing physical mechanisms in operation. Here, we examine the effect on pattern formation of radiation-induced swelling, which has been excluded from prior treatments of stress in irradiated films. After developing a suitable continuum model, we perform a linear stability analysis to determine its effect on stability. Under appropriate simplifying assumptions, we find swelling indeed to be stabilizing at all angles for wavenumbers typical of experimental observations. Therefore, this mechanism may account for the suppression of ripple formation observed at energies over 1 keV.
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