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Fabrication and Characterization of Superconducting Resonators
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Ultra-Efficient Superconducting Dayem Bridge Field-Effect Transistor.

Federico Paolucci1, Giorgio De Simoni1, Elia Strambini1

  • 1NEST , Instituto Nanoscienze-CNR and Scuola Normale Superiore , I-56127 Pisa , Italy.

Nano Letters
|June 13, 2018
PubMed
Summary
This summary is machine-generated.

We developed Ti-based Dayem bridge field-effect transistors (DB-FETs) to control superconducting critical current (Ic). These devices demonstrate tunable superconducting properties, paving the way for advanced superconducting electronics.

Keywords:
Josephson effectfield effectsuperconductivitytransistor

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Electrical Engineering

Background:

  • Superconducting field-effect transistors (SuFETs) and Josephson field-effect transistors (JoFETs) modulate superconducting properties via electric-field control of charge carriers.
  • Electric-field effects are generally considered weak in superconducting metals, yet recent experiments show modulation of critical current (Ic) in metallic transistors.
  • The underlying mechanism for this electric-field modulation in metallic superconductors remains unclear.

Purpose of the Study:

  • To experimentally demonstrate Ti-based Dayem bridge field-effect transistors (DB-FETs) capable of controlling the superconducting critical current (Ic).
  • To investigate the mechanism behind electric-field-induced modulation of superconducting properties in metallic channels.

Main Methods:

  • Fabrication of Ti-based Dayem bridge field-effect transistors (DB-FETs) using an accessible process.
  • Measurement of critical current (Ic), critical temperature (Tc), and normal-state resistance (RN) under varying gate voltages (VG).
  • Analysis of superconducting state resistance (RS) and Josephson kinetic inductance (LK) modulation.

Main Results:

  • Achieved symmetric, full suppression of Ic at critical gate voltages (VCG) as low as ±8 V, near 85% of the critical temperature (TC ≈ 550 mK).
  • Observed gate-independent TC and RN, with increased RS near VCG, suggesting the formation of field-effect induced metallic puddles.
  • Demonstrated high transconductance (|gmMAX| ≈ 15 μA/V) and a two-orders-of-magnitude variation in Josephson kinetic inductance (LK) with VG.

Conclusions:

  • DB-FETs enable effective electric-field control over superconducting critical current in metallic channels.
  • The observed behavior supports a model of field-effect induced metallic puddles influencing superconductivity.
  • DB-FETs are promising candidates for superconducting electronics, qubits, tunable interferometers, and photon detectors.