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Updated: Feb 9, 2026

Trapping of Micro Particles in Nanoplasmonic Optical Lattice
Published on: September 5, 2017
Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP
Xin Yi1, Shiyu Xie2, Baolai Liang3
1Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield, S1 3JD, UK.
Abstract:
The electron and hole avalanche multiplication characteristics have been measured in bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes, lattice matched to InP, with nominal avalanche region thicknesses of ~0.6 μm, 1.0 μm and 1.5 μm. From these and data from two much thinner devices, the bulk electron and hole impact ionization coefficients (α and β respectively), have been determined over an electric-field range from 220-1250 kV/cm for α and from 360-1250 kV/cm for β for the first time. The α/β ratio is found to vary from 1000 to 2 over this field range, making it the first report of a wide band-gap III-V semiconductor with ionization coefficient ratios similar to or larger than that observed in silicon.
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