Microscopic Nanomechanical Dissipation in Gallium Arsenide Resonators
M Hamoumi1, P E Allain1, W Hease1
1Matériaux et Phénomènes Quantiques, Université Paris Diderot, CNRS UMR 7162, Sorbonne Paris Cité, 75013 Paris, France.
Physical Review Letters
|June 16, 2018
Summary
Nanomechanical dissipation in gallium arsenide resonators is dominated by two-level systems, especially at surfaces. These systems influence damping and fluctuations across a wide temperature range, impacting device performance.
Area of Science:
- Solid State Physics
- Nanomechanics
- Optomechanics
Background:
- High-frequency optomechanical resonators are crucial for sensitive measurements.
- Understanding nanomechanical dissipation is key to improving device performance.
- Gallium arsenide (GaAs) is a promising material for optomechanical devices.
Purpose of the Study:
- To systematically investigate nanomechanical dissipation in GaAs optomechanical disk resonators.
- To identify the dominant sources of dissipation at high frequencies (≈300 MHz).
- To correlate dissipation mechanisms with microscopic properties and surface effects.
Main Methods:
- Fabrication of high-frequency GaAs optomechanical disk resonators.
- Measurements of mechanical dissipation at cryogenic (3 K) and room temperatures (300 K).
- Analysis using phonon-phonon interaction models and two-level system (TLS) models.
- Surface modification via atomic layer deposition (ALD) of alumina.
Main Results:
- Phonon-phonon interactions contribute a temperature-dependent loss background, diminishing at cryogenic temperatures.
- Surface dissipation is significant, as evidenced by changes in quality factor after alumina ALD.
- The temperature dependence of dissipation is accurately described by TLS models.
- TLS, particularly at surfaces, are identified as the primary cause of damping and fluctuations.
Conclusions:
- Nanomechanical dissipation in GaAs optomechanical resonators is governed by microscopic properties, specifically TLS.
- Surface-localized TLS play a critical role in damping and fluctuations from 3 K to 300 K.
- Minimizing TLS, especially at surfaces, is essential for enhancing the performance of high-quality crystalline nanomechanical devices.
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