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Atomic-scale strain manipulation of a charge density wave.

Shang Gao1, Felix Flicker2,3, Raman Sankar4,5

  • 1Department of Physics, Boston College, Chestnut Hill, MA 02467.

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|June 20, 2018
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Summary

Strain engineering in quantum materials like 2H-NbSe2 dramatically alters charge density wave (CDW) ordering. This study reveals how applied strain modifies electronic and phonon properties to control CDW geometry and wavevectors.

Keywords:
NbSe2charge density wavesscanning tunneling microscopystrain

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Materials

Background:

  • Charge density waves (CDWs) are fundamental electronic instabilities in quantum materials.
  • Controlling CDW wavevector and geometry is challenging, especially in higher dimensions where Fermi surface nesting is limited.

Purpose of the Study:

  • To implement a strain-engineering method compatible with low-temperature scanning tunneling microscopy/spectroscopy (STM/S).
  • To investigate the effects of strain on CDW properties in 2H-NbSe2.
  • To unveil the microscopic mechanism of CDW formation under strain.

Main Methods:

  • Low-temperature scanning tunneling microscopy/spectroscopy (STM/S) measurements.
  • Application of a novel strain-engineering technique.
  • Theoretical analysis of electronic band structure and phonon dispersion.

Main Results:

  • Demonstrated successful strain-engineering of CDWs in 2H-NbSe2.
  • Observed significant changes in CDW ordering wavevector and geometry due to small strain-induced modifications.
  • Linked strain-induced changes in electronic band structure and phonon dispersion to CDW alterations.

Conclusions:

  • Strain engineering provides a powerful tool to manipulate CDW states in quantum materials.
  • The study elucidates the microscopic mechanisms governing CDW formation influenced by strain.
  • The developed method is broadly applicable to other spectroscopic techniques for engineering electronic states in materials sensitive to strain or symmetry breaking.