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Broadband Sensitization of Lanthanide Emission with Indium Phosphide Quantum Dots for Visible to Near-Infrared
Joseph K Swabeck1,2, Stefan Fischer1,2, Noah D Bronstein1,2
1Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States.
Abstract:
Semiconductor quantum dot (QD)-sensitized lanthanide ions hold great promise in producing a broadly absorbing and sharply emitting luminophore, but their synthesis has proven to be difficult. We report the first synthesis of core/shell/shell InP/Ln xY1- xF3/ShF3 (Ln = Yb, Nd; Sh = Lu, Y) nanocrystals that exhibit a broad visible absorption coupled to a sharp near-infrared emission. Additionally, this is the first report of Nd being coupled to a QD absorber. We characterize the system with a variety of electron microscopy and X-ray techniques that prove this unique structure. Optical measurements confirm the correlation of the Ln3+ emission to the QD absorption, while the presence of a trap-state emission gives a clue as to the mechanism of energy transfer between the dot and the lanthanide.
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Dot Product
In engineering, the dot product of any two vectors is the product of the magnitudes of the vectors and the cosine of the angle between them. It is denoted by a dot symbol between the two vectors.
Consider a vehicle pulling an object along the ground using a rope. If the rope makes an angle with the horizontal axis, the work done can be calculated using the dot product of the force applied and the object's displacement.
The dot...
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