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Advanced GeSn/SiGeSn Group IV Heterostructure Lasers
Nils von den Driesch1, Daniela Stange1, Denis Rainko1
1Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT) Forschungszentrum Jülich 52425 Jülich Germany.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|June 26, 2018
Summary
Advanced group IV semiconductor heterostructures, including multi-quantum wells (MQWs), show promise for efficient, complementary metal-oxide-semiconductor (CMOS)-compatible lasers. These GeSn/SiGeSn materials offer direct bandgap active layers for next-generation photonic devices.
Area of Science:
- Materials Science
- Semiconductor Physics
- Optoelectronics
Background:
- Group IV semiconductors are crucial for complementary metal-oxide-semiconductor (CMOS) technology.
- Integrating photonic functionalities into CMOS platforms requires advanced material systems.
- Heterostructures, particularly those involving Germanium-Tin (GeSn), are explored for direct bandgap properties.
Purpose of the Study:
- To demonstrate the growth and characterization of advanced group IV semiconductor materials for CMOS-compatible photonics.
- To investigate GeSn/SiGeSn heterostructures and multi-quantum wells (MQWs) for laser applications.
- To analyze carrier confinement and quantization effects on material properties.
Main Methods:
- Epitaxial growth of GeSn/SiGeSn double heterostructures and MQWs.
- Advanced characterization techniques: atom probe tomography and dark-field electron holography.
- Optical characterization: photoluminescence spectroscopy.
- Theoretical calculations for band structure analysis.
Main Results:
- Successful growth of complex GeSn/SiGeSn heterostructures with high material quality.
- Extraction of critical composition and strain parameters influencing band structure.
- Evaluation of carrier confinement and quantization effects via photoluminescence.
- Demonstration of potential for efficient group IV lasers.
Conclusions:
- MQW heterostructures exhibit the highest potential for next-generation CMOS-compatible group IV lasers.
- The GeSn/SiGeSn material system is a viable candidate for integrated photonics.
- Understanding carrier confinement is key to optimizing laser performance in these materials.
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