Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Area of Science:

• Materials Science
• Renewable Energy
• Nanotechnology

Background:

• Planar perovskite solar cells (PSCs) are a promising photovoltaic technology.
• Traditional electron transporting layers (ETLs) often require high-temperature processing, limiting material compatibility and scalability.
• Tin oxide (SnO2) is an attractive ETL material due to its suitable electronic properties.

Purpose of the Study:

• To investigate the use of low-temperature atomic layer deposition (ALD) for SnO2 ETLs in planar PSCs.
• To analyze the impact of ALD SnO2 properties on device performance.
• To demonstrate the potential of ALD SnO2 for high-efficiency and stable PSCs.

Main Methods:

• Fabrication of planar perovskite solar cells using ALD-deposited SnO2 ETLs at low temperatures.
• Characterization of the optical, chemical, and electrical properties of the ALD SnO2 layer.
• Investigation of the perovskite/ETL interface and charge recombination dynamics.
• Device performance testing, including power conversion efficiency (PCE), stability, and reproducibility analysis.

Main Results:

• ALD SnO2 ETLs exhibit excellent electron extraction and hole-blocking capabilities.
• Surface passivation of the ALD SnO2 layer is crucial for minimizing charge recombination at the perovskite/ETL interface.
• The fabricated planar PSCs demonstrate high reproducibility and stability.
• A power conversion efficiency of 20% was achieved.

Conclusions:

• Low-temperature ALD of SnO2 is a viable and advantageous method for fabricating ETLs in planar PSCs.
• Optimized surface passivation of SnO2 ETLs significantly enhances device performance by reducing recombination.
• This approach offers a scalable and efficient pathway towards high-performance perovskite solar cells.