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The Auger process in multilayer WSe2 crystals.

Yuanzheng Li1, Jia Shi, Heyu Chen

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Summary
This summary is machine-generated.

Multilayer tungsten diselenide (WSe2) exhibits anomalous photoluminescence quenching at low temperatures due to Auger recombination. This study reveals two distinct Auger processes impacting carrier dynamics in WSe2 optoelectronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Multilayer tungsten diselenide (WSe2) shows promise for optoelectronic devices due to enhanced optical density and absorbance compared to monolayer WSe2.
  • Understanding carrier dynamics is crucial for optimizing WSe2-based device performance, but remains largely unexplored.

Purpose of the Study:

  • To investigate the anomalous photoluminescence (PL) quenching observed in multilayer WSe2 at low temperatures.
  • To elucidate the underlying carrier recombination mechanisms, specifically Auger processes, governing PL quenching.

Main Methods:

  • Experimental observation of anomalous PL quenching with decreasing temperature.
  • Utilizing transient absorption spectroscopy to probe carrier dynamics.
  • Applying the Auger recombination model to quantify recombination rates.

Main Results:

  • Anomalous photoluminescence (PL) quenching was observed in multilayer WSe2 as temperature decreased to 77 K.
  • Auger processes, driven by a phonon bottleneck effect and strong photon absorption, were identified as the cause of PL quenching.
  • Two distinct Auger processes (fast: 1-2 ps; slow: >190 ps) linked to deep midgap defect-levels were resolved.
  • Auger recombination rates were quantitatively estimated at approximately 6.69 × 10-2 cm2 s-1 and 1.22 × 10-3 cm2 s-1.

Conclusions:

  • Auger recombination significantly impacts carrier dynamics and PL quenching in multilayer WSe2 at low temperatures.
  • The identified deep midgap defect-levels play a critical role in facilitating these Auger processes.
  • These findings offer crucial insights for optimizing the optical and electrical properties of multilayer WSe2 optoelectronic devices.