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Screening of Coatings for an All-Solid-State Battery Using In Situ Transmission Electron Microscopy
Published on: January 20, 2023
Three-dimensional scanning transmission electron microscopy of dislocation loops in tungsten
S Hasanzadeh1, R Schäublin2, B Décamps3
1Laboratoire de Spectroscopie et Microscopie Electronique, Institut de Physique, Ecole Polytechnique Fédérale de Lausanne, Lausanne CH-1015, Switzerland.
Scanning transmission electron microscopy (STEM) reveals radiation-induced dislocation loops in tungsten. These defects, including nanometric loops and 3-D rafts, easily diffuse even at room temperature.
Area of Science:
- Materials Science
- Nuclear Engineering
- Condensed Matter Physics
Background:
- Scanning transmission electron microscopy (STEM) is crucial for analyzing crystal defects.
- Tungsten irradiation forms nanometric dislocation loops, potentially creating 3-D rafts.
- Understanding defect behavior is vital for materials under irradiation.
Purpose of the Study:
- To quantitatively assess the spatial distribution and characteristics of radiation-induced defects in tungsten.
- To investigate the impact of temperature on defect formation and arrangement.
- To evaluate STEM's capability for 3-D defect analysis.
Main Methods:
- In situ irradiation of tungsten samples with 1.2 MeV W ions to 0.017 dpa at room temperature and 700°C.
- Quantitative characterization using stereo imaging in STEM mode for Burgers vector analysis, number density, size, and spatial arrangement.
- Comparison with conventional transmission electron microscopy (TEM).
Main Results:
- Dislocation loops with Burgers vectors ½ a₀〈111〉 and a₀〈100〉 were observed.
- Loops exhibited significant diffusion, even at room temperature, extending beyond the simulated damage profile.
- At 700°C, loops formed elongated rafts on {111} planes, aligned along 〈110〉 directions.
Conclusions:
- STEM provides powerful 3-D quantitative analysis of defects in tungsten.
- Tungsten defects exhibit high mobility, even at room temperature.
- The formation of rafts and defect behavior are temperature-dependent.
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