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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Gate-Defined Electron-Hole Double Dots in Bilayer Graphene
L Banszerus1,2, B Frohn1, A Epping1,2
1JARA-FIT and 2nd Institute of Physics , RWTH Aachen University , 52074 Aachen , Germany, European Union.
Nano Letters
|June 28, 2018
Summary
We demonstrate precise control over bilayer graphene quantum dots, enabling single, double, and triple-dot operations. This advancement facilitates detailed studies of electron-hole double dots and their magnetic field responses.
Area of Science:
- Condensed matter physics
- Quantum electronics
- Graphene nanotechnology
Background:
- Bilayer graphene is a promising material for quantum devices.
- Electrostatically defined quantum dots allow for tunable electronic properties.
- Previous fabrication methods limited precise control over carrier confinement.
Purpose of the Study:
- To demonstrate gate-controlled quantum dot operation in bilayer graphene.
- To characterize electron-hole double-dot systems.
- To investigate the magnetic field response of single-dot energy levels.
Main Methods:
- Utilizing encapsulated bilayer graphene with hexagonal boron nitride.
- Employing graphite gates for electrostatic confinement and current pinch-off.
- Characterizing device performance through transport measurements.
Main Results:
- Achieved stable single-, double-, and triple-dot operation.
- Implemented two distinct electron-hole double-dot systems with similar energy scales.
- Observed Zeeman spin-splitting in single-dot excited states with a g-factor of 2.
Conclusions:
- Advanced fabrication techniques enable high-fidelity electrostatic control in bilayer graphene quantum dots.
- The demonstrated devices are suitable for exploring complex quantum phenomena.
- The results validate theoretical predictions for spin properties in graphene quantum dots.
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