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Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy
Published on: July 15, 2019
Interlayer electrical resistivity of rotated graphene layers studied by in-situ scanning electron microscopy
He Li1, Xianlong Wei1, Gongtao Wu1
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
Abstract:
Interlayer electrical transport between two-dimensional atomic crystals can be strongly modulated by the rotational misalignment between them. However, the experimental study on the interlayer electrical transport between rotated two-dimensional atomic crystals with variable rotation angles is challenging. Here, an in-situ scanning electron microscopy method is developed to study the interlayer electrical transport between rotated graphene layers. We employ nanoprobes installed in a scanning electron microscope to function as both "fingers" to induce interlayer rotation of a microfabricated metal-graphite-metal sandwiched island and also electrical probes to measure interlayer electrical resistivity of the rotated graphene layers. Interlayer electrical resistivity of the rotated graphene layers is found to increase monotonically by three orders of magnitude from ∼0.1 to ∼100 Ω cm when the rotational misalignment angle increases from 0° to 30°. This phenomenon can be well described by phonon-mediated electrical transport model. The large-magnitude tunability of interlayer electrical resistivity by mechanical rotation implies the potential applications of rotated graphene layers in nanoelectromechanical systems. Our results also provide a method for studying and tuning interlayer electrical transport between rotated two-dimensional atomic crystals.
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