Enhanced Hydrogen Detection Based on Mg-Doped InN Epilayer
Shibo Wang1, Xinqiang Wang2,3,4, Zhaoying Chen5
1State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China. 1501210114@pku.edu.cn.
Sensors (Basel, Switzerland)
|July 1, 2018
Summary
Magnesium-doped Indium Nitride (InN:Mg) films show enhanced performance for hydrogen sensing applications. These InN:Mg sensors offer improved response compared to as-grown Indium Nitride, highlighting their potential for gas detection.
Area of Science:
- Materials Science
- Semiconductor Physics
- Chemical Sensing
Background:
- Indium Nitride (InN) exhibits a surface electron accumulation layer (~10^13 cm^-2), making it suitable for sensing.
- Mg-doping in InN can modify its electrical properties for enhanced sensor performance.
Purpose of the Study:
- To investigate the hydrogen sensing characteristics of Mg-doped InN (InN:Mg) films.
- To compare the performance of InN:Mg sensors with as-grown InN sensors.
- To understand the role of Mg doping on the sensing mechanism.
Main Methods:
- Growth of InN:Mg films using molecular beam epitaxy (MBE).
- Fabrication and testing of hydrogen sensors based on InN:Mg.
- Resistance variation measurements under H2/air exposure.
- Hall-effect measurements to analyze electrical properties.
Main Results:
- InN:Mg sensors demonstrated a resistance variation ratio of 16.8% for 2000 ppm H2 at 125°C.
- Response and recovery times were less than 2 minutes.
- The response magnitude was 60% higher than sensors based on as-grown InN.
- Hall-effect measurements indicated buried p-type conduction in InN:Mg with optimal doping.
Conclusions:
- Mg-doped InN offers significant advantages for hydrogen sensing applications.
- The enhanced performance is attributed to modified electrical properties, including buried p-type conduction.
- InN:Mg shows strong potential for developing advanced gas sensors.
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