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Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth

Fernando Lloret1,2,3, David Eon4, Etienne Bustarret5

  • 1Department of material science and ME and IQ, University of Cádiz, Puerto Real, 11510 Cádiz, Spain. fernando.lloret@uca.es.

Nanomaterials (Basel, Switzerland)
|July 4, 2018
PubMed

Keywords:
MPCVDTEMboron-doped diamonddiamonddiamond growthdislocationslateral diamond growthselective diamond growth

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