Experiments on MEMS Integration in 0.25 μm CMOS Process.

Area of Science:

• Materials Science
• Electrical Engineering
• Mechanical Engineering

Background:

• CMOS-MEMS technology offers integrated solutions for micro-scale devices.
• Development requires careful consideration of fabrication processes and material properties.

Purpose of the Study:

• To document practical experience in developing CMOS-MEMS devices using IHP SG25 technology.
• To define a design space for CMOS-MEMS devices and identify techniques to prevent common failure modes.

Main Methods:

• Experimental prototyping and characterization of CMOS-MEMS chips.
• Exploration of process parameters and definition of design rules.
• Application of design techniques to address structural and reliability concerns.

Main Results:

• Successful development of CMOS-MEMS devices with inertial mass up to 4.3 μg.
• Achieved resonance frequencies as low as 4.35 kHz.
• Demonstrated techniques to avoid layer delamination, device stiction, passivation fracture, and stress-induced cracking.

Conclusions:

• Practical experience in CMOS-MEMS development provides valuable insights for future designs.
• The defined design space and techniques enhance the reliability and performance of CMOS-MEMS devices.
• IHP SG25 technology is suitable for fabricating advanced CMOS-MEMS with improved characteristics.