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Enhancing bulk defect-mediated absorption in silicon waveguides by doping compensation technique.

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We enhanced silicon waveguide photodiode responsivity using a doping compensation technique. This method increases lattice defects and reduces free carriers, improving performance for optical power monitoring in silicon photonics.

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Area of Science:

  • Photonics and Optoelectronics
  • Materials Science and Engineering

Background:

  • Silicon waveguide photodiodes (SiWG PDs) are crucial for in-line optical power monitoring in silicon photonic integrated circuits.
  • Bulk defect-mediated absorption (BDA) of sub-bandgap photons enables SiWG PD functionality.
  • Current methods using ion implantation for BDA often yield limited responsivity due to processing optimization for modulation, not absorption.

Purpose of the Study:

  • To enhance the responsivity of SiWG PDs for optical power monitoring.
  • To investigate the effectiveness of a doping compensation technique for improving BDA in SiWG PDs.
  • To analyze the impact of dopant compensation region dimensions on device performance.

Main Methods:

  • Implemented a doping compensation technique by overlapping P-type and N-type ion implantation windows in the waveguide core.
  • Investigated the influence of the compensation region's width on responsivity and operation speed.
  • Conducted responsivity measurements at -5 V and bit-error-rate tests at 10 Gb/s.

Main Results:

  • The doping compensation technique significantly enhanced responsivity, increasing from 2 mA/W to 17.5 mA/W as the compensation region width increased from 0 μm to 0.4 μm.
  • The achieved responsivity levels are comparable to SiWG PDs using dedicated ion bombardments for BDA.
  • A 0.2-μm-wide compensation region demonstrated the highest sensitivity in bit-error-rate tests at 10 Gb/s.

Conclusions:

  • The doping compensation technique is an effective method to improve responsivity in SiWG PDs for optical power monitoring.
  • Optimizing the dopant compensation region width is critical for balancing responsivity and operational speed.
  • This approach offers a viable pathway for high-performance, integrated optical power monitoring solutions in silicon photonics.