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High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts.

Muhammad Atif Khan1, Servin Rathi1, Changhee Lee1

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Summary

A novel graphene-molybdenum disulfide (GM) heterostructure diode with an asymmetric top gate (ATG) achieves a high rectification ratio of 10^5. This advancement in 2D materials opens new avenues for nano-electronics and optoelectronics.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene-MoS2 (GM) heterostructures are promising for electronic devices.
  • Achieving high rectification ratios in diodes is crucial for electronic applications.

Purpose of the Study:

  • To fabricate and characterize a GM heterostructure diode with an asymmetric top gate (ATG).
  • To investigate the impact of ATG on the diode's rectification ratio and optoelectronic properties.

Main Methods:

  • Fabrication of a GM heterostructure diode with asymmetric contacts and an ATG.
  • Electrical characterization including rectification ratio measurements under varying temperatures and gate voltages.
  • Optoelectronic measurements under laser illumination.

Main Results:

  • The GM diode achieved a rectification ratio of 10^5 with the incorporation of an ATG, a significant improvement from 5.
  • The ATG effectively modulated carrier concentration and Schottky barrier height (SBH).
  • The device exhibited a strong optoelectronic response with a 100-fold increase in photocurrent, responsivity of 1.9 A/W, and detectivity of 2.4 x 10^10 Jones.

Conclusions:

  • The developed ATG in GM heterostructure diodes significantly enhances rectification ratios.
  • The study confirms the role of ATG in modulating SBH and carrier concentration.
  • This work presents a viable approach for utilizing 2D materials in advanced nano-electronic and optoelectronic devices.