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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Coherent backscattering in quasi-ballistic ultra-high mobility GaAs/AlGaAs 2DES
R L Samaraweera1, H-C Liu2, B Gunawardana2
1Department of Physics and Astronomy, Georgia State University, Atlanta, 30303, Georgia. marl@phy-astr.gsu.edu.
Abstract:
A small and narrow negative-magnetoresistance (MR) effect that appears about null magnetic field over the interval -0.025 ≤ B ≤ 0.025 T in magnetotransport studies of the GaAs/AlGaAs 2D system with μ ≈ 107cm2/Vs is experimentally examined as a function of the sample temperature, T. The temperature dependent magnetoresistance data were fit using the Hikami et al. theory, without including the spin-orbit correction, to extract the inelastic length, li, which decreases rapidly with increasing temperature. It turns out that li < le, where le is the elastic length, for all T. Thus, we measured the single particle lifetime, τs, and the single particle mean free path ls = vFτs. A comparison between li and ls indicates that li > ls. The results suggest that the observed small and narrow magnetoresistance effect about null magnetic field could be a manifestation of coherent backscattering due to small angle scattering from remote ionized donors in the high mobility GaAs/AlGaAs 2DES.
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