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Updated: Feb 8, 2026

High Resolution Phonon-assisted Quasi-resonance Fluorescence Spectroscopy
Published on: June 28, 2016
Relationship between electron-phonon interaction and low-frequency Raman anisotropy in high-mobility organic
A Yu Sosorev1, D R Maslennikov, I Yu Chernyshov
1Faculty of Physics and International Laser Center, M. V. Lomonosov Moscow State University, Moscow 119991, Russia. paras@physics.msu.ru.
Abstract:
Recent theoretical studies have shown that charge transport in high-mobility organic semiconductors is limited by low-frequency vibrations because of strong non-local electron-phonon interaction. Here we investigate two high-electron-mobility organic semiconductors with similar molecular structures but considerably different crystal packings, TCNQ and F2-TCNQ, and reveal the relationship between the experimental low-frequency Raman spectra and the calculated contributions of various vibrational modes to the electron-phonon interaction. We suggest that the combination of Raman spectroscopy with solid-state DFT is a powerful tool for probing electron-phonon interaction and focused search for high-mobility organic semiconductors.
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