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Updated: Feb 8, 2026

Making Record-efficiency SnS Solar Cells by Thermal Evaporation and Atomic Layer Deposition
Published on: May 22, 2015
Enhanced photovoltaic performance of inverted polymer solar cells through atomic layer deposited Al2O3 passivation of
Bin Wei1, Zhenyu Tang1,2, Shuanglong Wang1,2
1Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai, 200072, People's Republic of China.
Abstract:
In this work, an atomic layer deposited (ALD) Al2O3 ultrathin layer was introduced to passivate the ZnO-nanoparticle (NP) buffer layer of inverted polymer solar cells (PSCs) based on P3HT:PCBM. The surface morphology of the ZnO-NP/Al2O3 interface was systematically analyzed by using a variety of tools, in particular transmission electron microscopy (TEM), evidencing a conformal ALD-Al2O3 deposition. The thickness of the Al2O3 layers was optimized at the nanoscale to boost electron transport of the ZnO-NP layer, which can be attributed to the suppression of oxygen vacancy defects in ZnO-NPs confirmed by photoluminescence measurement. The optimal inverted PSCs passivated by ALD-Al2O3 exhibited an ∼22% higher power conversion efficiency than the control devices with a pristine ZnO-NP buffer layer. The employment of the ALD-Al2O3 passivation layer with precisely controlled thickness provides a promising approach to develop high efficiency PSCs with novel polymer materials.
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