Observation of an environmentally insensitive solid-state spin defect in diamond.

Area of Science:

• Quantum science and engineering
• Solid-state physics
• Materials science

Background:

• Engineering coherent quantum systems is crucial for quantum technologies.
• Color centers in diamond offer a promising solid-state platform for quantum applications.
• Environmental decoherence from phonons and electric fields limits quantum system performance.

Purpose of the Study:

• To report a novel color center, the neutral silicon vacancy (SiV0), with enhanced insensitivity to environmental decoherence.
• To characterize the coherence and optical properties of SiV0 for quantum applications.

Main Methods:

• Materials engineering to optimize silicon implantation and conversion to SiV0.
• Measurement of spin-lattice relaxation and coherence times.
• Characterization of optical properties, including zero-phonon line emission and optical linewidth.

Main Results:

• Achieved >80% conversion of implanted silicon to SiV0.
• Observed spin-lattice relaxation times approaching 1 minute and coherence times approaching 1 second.
• ~90% of SiV0 emission into the zero-phonon line with near-transform-limited optical linewidths.

Conclusions:

• The neutral silicon vacancy (SiV0) exhibits exceptional coherence and optical properties.
• SiV0 demonstrates significant insensitivity to environmental decoherence.
• These properties position SiV0 as a highly promising defect for quantum network applications.