Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN

Quanbin Zhou1, Hong Wang2,3, Mingsheng Xu4,5

  • 1Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. zhouquanbin86@163.com.

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