Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN
Quanbin Zhou1, Hong Wang2,3, Mingsheng Xu4,5
1Engineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou 510640, China. zhouquanbin86@163.com.
Abstract:
We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate.
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