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Subwavelength engineering and asymmetry: two efficient tools for sub-nanometer-bandwidth silicon Bragg filters
Optics Letters
|July 14, 2018
Summary
Silicon-on-insulator (SOI) Bragg filters achieve narrowband performance with large rejection levels using subwavelength engineering and asymmetric corrugations. This overcomes fabrication limits for advanced on-chip signal processing.
Area of Science:
- Photonics
- Materials Science
- Electrical Engineering
Background:
- Bragg filters are crucial for silicon-on-insulator (SOI) photonics, enabling on-chip signal manipulation.
- Fabrication constraints often limit achieving narrowband Bragg filters with high rejection levels.
Purpose of the Study:
- To investigate subwavelength engineering and single-side corrugation asymmetry for improved SOI Bragg filters.
- To overcome minimum feature size limitations in conventional silicon (Si) Bragg filters.
Main Methods:
- Comprehensive study of corrugation asymmetry in conventional and subwavelength single-etched SOI Bragg filters.
- Experimental demonstration of a novel subwavelength geometry with shifted corrugation teeth.
Main Results:
- Corrugation asymmetry and subwavelength engineering significantly reduce bandwidth.
- Demonstrated null-to-null bandwidths of 0.8 nm (40 dB rejection) for symmetric and 0.6 nm (15 dB rejection) for asymmetric configurations.
Conclusions:
- Subwavelength engineering combined with asymmetric corrugations offers a viable path to narrowband SOI Bragg filters.
- The novel subwavelength geometry effectively addresses fabrication constraints for enhanced filter performance.
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