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Tunable black phosphorus heterojunction transistors for multifunctional optoelectronics.

Lin Wang1, Li Huang1, Wee Chong Tan1

  • 1Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore and Centre for Advanced 2D Materials, National University of Singapore, 6 Science Drive 2, Singapore. eleakw@nus.edu.sg.

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Area of Science:

  • 2D Materials Science
  • Optoelectronics
  • Semiconductor Device Physics

Background:

  • Black phosphorus (BP) is a promising 2D material for optoelectronics.
  • Existing BP devices often require complex fabrication like split-gates or vertical stacking.
  • Exploration of naturally formed BP heterojunctions for device applications is limited.

Purpose of the Study:

  • To report a novel thickness-modulated, gate-tunable BP heterojunction phototransistor.
  • To demonstrate high-performance optoelectronic applications using naturally formed heterojunctions.
  • To showcase multifunctionality for tunable, improved optoelectronics.

Main Methods:

  • Fabrication of a BP heterojunction phototransistor with thickness < 5 nm.
  • Device characterization under zero gate bias and varying conditions.
  • Evaluation of photoresponsivity, noise equivalent power, and photovoltaic properties.

Main Results:

  • Achieved excellent photoresponsivity of 383 A/W at 1550 nm.
  • Demonstrated shot-noise-limited noise equivalent power (NEP_shot) < 10^-2 pW/Hz^1/2.
  • Exhibited infrared photovoltaic device capability without source-drain bias due to built-in electric field.

Conclusions:

  • The novel BP heterojunction phototransistor offers superior performance without complex fabrication.
  • The device shows potential for ultra-low power detection and infrared photovoltaic applications.
  • This work paves the way for advanced 2D material-based tunable optoelectronics.