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Updated: Feb 7, 2026

Monovalent Cation Doping of CH3NH3PbI3 for Efficient Perovskite Solar Cells
Published on: March 19, 2017
Sequential Preparation of Dual-Layer Fluorine-Doped Tin Oxide Films for Highly Efficient Perovskite Solar Cells
Kun-Mu Lee1,2,3, Min-Yao Hou1, Vembu Suryanarayanan4
1Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan, 33302, Taiwan.
Abstract:
A dual-layer fluorine-doped tin oxide (FTO) film has been fabricated by means of sequential spray pyrolysis for high-efficiency perovskite solar cells (PSCs). The H-FTO/L-FTO dual layer film consists of a H-FTO layer prepared at high deposition temperature (≈450 °C) and a L-FTO layer, fabricated at low deposition temperature (≈150 °C), which is used to replace the traditional compact TiO2 /FTO layer. The effects of F/Sn molar ratio, precursor solution concentration, and deposition temperature on the electrical, optical, surface morphological, and grain structural characteristics of H-FTO layers have been studied systematically. With an increase in precursor solution concentration, the mobility and carrier concentration of H-FTO increases; however, the grain size and sheet resistance decreases as the precursor solution concentration increases. A high deposition temperature results in a large grain size and enhanced haze value. The L-FTO layer expresses compact layer growth, inconsistent with the H-FTO surface structure, and possesses excellent electron collection and transport efficiency. The effect of the hole-blocking characteristics of L-FTO on the PSC performance is studied. This study provides a novel dual-layer FTO film to replace the traditional compact TiO2 /FTO layer, which is usually prepared by coating TiO2 precursor on FTO following calcination at 450 °C. The H-FTO/L-FTO dual-layer film can simplify the fabrication process and maintain a high power conversion efficiency (PCE); this results in more efficient electron transportation and blocking of holes. The champion device of PSCs with H-FTO/L-FTO shows the highest PCE of 17.37 % under the illumination of 100 mW cm-2 (AM1.5G).
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