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Label-free photoelectrochemical immunosensor for NT-proBNP detection based on La-CdS/3D ZnIn2S4/Au@ZnO sensitization
Jinhui Feng1, Faying Li2, Xiaojian Li1
1Key Laboratory of Interfacial Reaction & Sensing Analysis in Universities of Shandong, School of Chemistry and Chemical Engineering, University of Jinan, Jinan 250022, PR China.
Abstract:
A new, photoelectrochemical immunosensor was proposed on the basis of the La-CdS/3D ZnIn2S4/Au@ZnO sensitization structure for detection of aminoterminal pro-brain natriuretic peptides (NT-proBNP). The Au@ZnO-modified electrode was first assembled with 3D ZnIn2S4, and then further deposited with lanthanum doped cadmium sulfide (La-CdS) via successive ionic layer adsorption and reaction strategy. The Au@ZnO has excellent photoelectric activity and electrical conductivity. The ZnIn2S4 with 3D architectures not only exhibit high photocurrent intensity under visible-light irradiation but also have large surface for the La-CdS deposition. Meanwhile, the La-CdS doped structure could depress the charge recombination, which effectively promotes separation of the generated electron-hole (e-/h+) pairs and consequently enhances the photocurrent conversion efficiency. The polydopamine (PDA) was used not only as a cross-linker reagent for the immobilization of the anti-NT-proBNP but also as an electron donor for promoting the photo-generated e-/h+ separation of the semiconductors. Under optimal conditions, the well-designed photoelectrochemical immunoassay exhibited a low detection limit of 0.32 pg mL-1 and a wide linear range from 0.8 pg mL-1 to 45 ng mL-1 for target NT-proBNP detection. Meanwhile, it also presented good reproducibility, specificity, and stability and might open a new promising strategy for the detection of other important tumor markers.
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