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Updated: Feb 7, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices
Published on: November 15, 2013
Sergey Lazarev1,2, Dmitry Dzhigaev1, Zhaoxia Bi3
1Deutsches Elektronen-Synchrotron DESY , Notkestraße 85 , D-22607 Hamburg , Germany.
Researchers studied gallium nitride (GaN) nanowires (NWs) under voltage, revealing significant bending and determining their piezoelectric constant (7.7 pm/V) and tensile strength (1.22 GPa). This work aids in designing functional nanoelectronic devices.
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