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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Bonding in Metals02:32

Bonding in Metals

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Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”. 
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Noncovalent Attractions in Biomolecules

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Noncovalent attractions are associations within and between molecules that influence the shape and structural stability of complexes. These interactions differ from covalent bonding in that they do not involve sharing of electrons.
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Two-Dimensional Materials Inserted at the Metal/Semiconductor Interface: Attractive Candidates for Semiconductor

Min-Hyun Lee1, Yeonchoo Cho1, Kyung-Eun Byun1

  • 1Samsung Advanced Institute of Technology , Suwon 443-803 , Republic of Korea.

Nano Letters
|July 24, 2018
PubMed
Summary

Introducing two-dimensional (2D) materials like graphene or hexagonal boron nitride (h-BN) significantly reduces contact resistivity in metal/silicon (Si) Schottky junctions. This breakthrough enhances semiconductor device performance by overcoming a key limitation.

Keywords:
2D material-inserted contactgraphenehexagonal boron nitridepinning effectspecific contact resistivitywork function modulation

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Semiconductor Physics

Background:

  • Metal-semiconductor junctions are critical for semiconductor devices.
  • Current limitations in these junctions hinder device performance improvements.
  • Schottky barrier height at metal/n-type Si interfaces is a key factor.

Purpose of the Study:

  • To reduce specific contact resistivity (ρc) in metal/n-type Si Schottky contacts.
  • To investigate the effect of introducing two-dimensional (2D) materials at the interface.
  • To explore mechanisms for achieving lower Schottky barriers.

Main Methods:

  • Interfacial insertion of graphene or hexagonal boron nitride (h-BN) between metal and n-type Si.
  • Fabrication of metal/2D material/n-type Si structures.
  • Measurement of specific contact resistivity (ρc) on lightly and heavily doped n-type Si.

Main Results:

  • Achieved ρc values of 3.30 nΩ cm² (lightly doped Si) and 1.47 nΩ cm² (heavily doped Si).
  • These values approach the theoretical limit of 1.3 nΩ cm².
  • Demonstrated that 2D materials form dipoles, reduce metal work function, and shift the pinning point towards the Si conduction band, lowering the Schottky barrier.

Conclusions:

  • 2D material insertion effectively reduces contact resistivity in metal/n-type Si systems.
  • The mechanism involves work function modulation and pinning point shift by 2D material dipoles.
  • This technique offers a pathway for significant performance enhancements in semiconductor technologies.