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In-plane direct current probing for spin orbit torque-driven effective fields in perpendicularly magnetized heavy
Seungmo Yang1, Jinhyung Choi1, Junghoon Shin1
1Novel Functional Materials and Device Laboratory, Research Institute of Natural Science, Department of Physics, Hanyang University, Seoul, 133-791, Korea.
Scientific Reports
|July 25, 2018
Summary
Researchers developed a new direct current measurement method to precisely determine spin orbit torque-driven effective fields in spintronic devices. This approach offers a full polar angle range analysis without complex harmonic methods.
Area of Science:
- Spintronics
- Condensed Matter Physics
- Materials Science
Background:
- Electrical control of magnetization is a key goal in spintronics.
- Spin-orbit torque (SOT) is a promising mechanism for magnetization control in heavy-metal/ferromagnet/oxide heterostructures.
- Accurate characterization of SOT-driven effective fields is crucial for device applications.
Purpose of the Study:
- To introduce a direct current (DC) measurement approach for identifying SOT-driven effective fields.
- To provide a generic alternative to harmonic analyses for SOT characterization.
- To investigate the angular dependence of SOT-driven effective fields over a full polar angle range.
Main Methods:
- Implementation of an in-plane DC measurement technique.
- Application of the method to Ta/CoFeM/MgO and W/CoFeM/MgO heterostructures.
- Analysis of SOT-driven effective fields across a complete polar angle spectrum.
Main Results:
- The DC measurement approach successfully identified SOT-driven effective fields.
- A strong polar angular dependency of these effective fields was observed.
- Results were consistent across different heavy metal layers (Ta and W).
Conclusions:
- The developed DC measurement method is a versatile tool for characterizing SOT-driven effective fields.
- This technique simplifies the analysis of SOT phenomena without relying on harmonic methods.
- Understanding the angular dependence of SOT is vital for optimizing spintronic device performance.
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