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Enabling silicon-on-silicon photonics with pedestalled Mie resonators
1Grup de recerca en Micro i Nanotecnologies, Departament d'Enginyeria Electrònica, Universitat Politècnica de Catalunya, c/Jordi Girona Pascual 1-3, Barcelona 08034, Spain. moises.garin@upc.edu.
Nanoscale
|July 25, 2018
Summary
We developed novel silicon-on-silicon spheroidal Mie resonators on pedestals. This design overcomes substrate limitations for low-loss all-dielectric nanophotonics and enables hybrid photonic/electronic devices.
Area of Science:
- Nanophotonics
- All-dielectric metamaterials
- Silicon photonics
Background:
- High-refractive-index Mie resonators are key for low-loss nanophotonics.
- Implementing these resonators on low-index substrates is necessary to prevent damping and loss of symmetry.
- This requirement limits practical applications and integration.
Purpose of the Study:
- To propose a new photonic structure for high-refractive-index Mie resonators.
- To enable low-loss nanophotonic applications without low-index substrates.
- To facilitate the development of hybrid photonic/electronic devices.
Main Methods:
- Fabrication of silicon-on-silicon spheroidal-like resonators.
- Utilizing slim silicon pedestals for optical separation and mechanical/electrical stability.
- Standard lithography for precise control over size and arrangement.
Main Results:
- The proposed structure achieves optical performance comparable to low-index substrates.
- Demonstrated mechanical stability and electrical contact via silicon pedestals.
- Enabled precise control over resonator size and arrangement.
Conclusions:
- The silicon-on-silicon spheroidal resonator design overcomes substrate limitations.
- This approach opens new possibilities for hybrid photonic/electronic devices.
- Offers a pathway for practical, low-loss all-dielectric nanophotonic applications.
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