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Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Suppressing the excess OFF-state current of short-channel InAs nanowire field-effect transistors by nanoscale
Wenyuan Yang1, Dong Pan2,3, Rui Shen1
1Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, People's Republic of China.
Abstract:
The excess OFF-state current caused by band to band tunneling (BTBT) is a serious issue particularly in short-channel nanowire (NW) field-effect transistors (FETs), especially for narrow bandgap semiconductors such as InAs. Here, to clarify the components of the OFF-current and suppress the OFF-current, we for the first time fabricate and study InAs NW FETs with nanoscale partial-gate (PG). We fabricate a series of PGFETs and a normal full-gate (FG) FET on the same NW. Based on our results, the BTBT current component can reach tens of nanoamps in a typical 250 nm-channel InAs NW FGFET, and dominate the OFF-current. In contrast, there is almost no BTBT component in the PGFET, which provides a reference for other short-channel InAs NW FETs. Furthermore, the physical mechanism of the OFF-state carrier transport is discussed, and both electrons and holes currents are proven to be very important, based on our experimental results. Also, through statistic study, we find the BTBT effect can be more serious in the devices with better gate-control. Therefore, suppressing the BTBT effect is important to the future scaling-down.
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