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Alignment Method for Linear-Scale Projection Lithography Based on CCD Image Analysis.

Dongxu Ren1, Zexiang Zhao2, Jianpu Xi3

  • 1School of Mechatronics Engineering, Zhongyuan University of Technology, Zhengzhou 450007, China. rendongxu313@zut.edu.cn.

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|August 1, 2018
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Summary
This summary is machine-generated.

This study enhances mask alignment accuracy in projection lithography using a charge-coupled device (CCD) imaging method. The approach refines focal plane alignment, corrects errors, and achieves high-precision lithography with a scale accuracy of 0.79 μm.

Keywords:
alignment methodgrating linear displacement sensorlinear scaleprojection lithography

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Area of Science:

  • Optics and Photonics
  • Metrology
  • Semiconductor Manufacturing

Background:

  • Accurate mask alignment is critical for high-resolution lithography.
  • Existing methods face challenges in achieving precise focal plane alignment and error correction.

Purpose of the Study:

  • To develop and validate a novel method for improving mask alignment accuracy in linear scale projection lithography.
  • To enhance focal plane alignment and correct for multiple error sources.

Main Methods:

  • Application of the adjacent pixel gray square variance method on charge-coupled device (CCD) images.
  • Image splicing principles to compare and align two focal plane positions.
  • Correction of four typical errors based on total grating errors and mask rotation error analysis.
  • Utilizing threshold functions to model factors influencing rotation and alignment accuracy.
  • Employing a dual-frequency laser interferometer for mask slope correction.

Main Results:

  • Achieved a maximum CCD resolution of 0.1 μm.
  • Demonstrated a scale accuracy of 0.79 μm within a 200-mm measurement range.
  • Successfully corrected mask slope and aligned it with the slide plate.

Conclusions:

  • The proposed method significantly improves mask alignment accuracy in projection lithography.
  • The technique effectively addresses focal plane alignment and various error sources.
  • Validated static case analysis confirms the method's potential for high-precision lithography.