Solution-Processed Ferrimagnetic Insulator Thin Film for the Microelectronic Spin Seebeck Energy Conversion

The longitudinal spin Seebeck effects with a ferro- or ferrimagnetic insulator provide a new architecture of a thermoelectric device that could significantly improve the energy conversion efficiency. Until now, epitaxial yttrium iron garnet (YIG) films grown on gadolinium gallium garnet (GGG) substrates by a pulsed laser deposition have been most widely used for spin thermoelectric energy conversion studies. In this work, we developed a simple route to obtain a highly uniform solution-processed YIG film and used it for the on-chip microelectronic spin Seebeck characterization. We improved the film roughness down to ∼0.2 nm because the extraction of thermally induced spin voltage relies on the interfacial quality. The on-chip microelectronic device has a dimension of 200 μm long and 20 μm wide. The solution-processed 20 nm thick YIG film with a 10 nm Pt film was used for the spin Seebeck energy converter. For a temperature difference of Δ T ≈ 0.036 K applied on the thin YIG film, the obtained Δ V ≈ 28 μV, which is equivalent to S_LSSE ≈ 80.4 nV/K, is close to the typical reported values for thick epitaxial YIG films. The temperature and magnetic field-dependent behaviors of spin Seebeck effects in our YIG films suggest active magnon excitations through the noncoherent precession channel. The effective SSE generation with the solution-processed thin YIG film provides versatile applications of the spin thermoelectric energy conversion.