Feasible Route for a Large Area Few-Layer MoS₂ with Magnetron Sputtering

In this article, we report continuous and large-area molybdenum disulfide (MoS₂) growth on a SiO₂/Si substrate by radio frequency magnetron sputtering (RFMS) combined with sulfurization. The MoS₂ film was synthesized using a two-step method. In the first step, a thin MoS₂ film was deposited by radio frequency (RF) magnetron sputtering at 400 °C with different sputtering powers. Following, the as-sputtered MoS₂ film was further subjected to the sulfurization process at 600 °C for 60 min. Sputtering combined with sulfurization is a viable route for large-area few-layer MoS₂ by controlling the radio-frequency magnetron sputtering power. A relatively simple growth strategy is demonstrated here that simultaneously enhances thin film quality physically and chemically. Few-layers of MoS₂ are established using Raman spectroscopy, X-ray diffractometer, high-resolution field emission transmission electron microscope, and X-ray photoelectron spectroscopy measurements. Spectroscopic and microscopic results reveal that these MoS₂ layers are of low disorder and well crystallized. Moreover, high quality few-layered MoS₂ on a large-area can be achieved by controlling the radio-frequency magnetron sputtering power.