Related Experiment Video
Updated: Feb 6, 2026

10:52
Direct Imaging of Laser-driven Ultrafast Molecular Rotation
Published on: February 4, 2017
10.2K
Ultrafast switch-on dynamics of frequency-tuneable semiconductor lasers
Iman Kundu1, Feihu Wang2, Xiaoqiong Qi3
1School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK. I.Kundu@leeds.ac.uk.
Nature Communications
|August 8, 2018
Summary
Researchers observed ultrafast switching in frequency-tuneable semiconductor lasers on picosecond timescales. This reveals fundamental limits on frequency switching, crucial for optical communications and integrated circuits.
Area of Science:
- Optoelectronics
- Semiconductor Lasers
- Photonics
Background:
- Monolithic frequency-tuneable semiconductor lasers are vital for optical communications and photonic integrated circuits.
- Previous studies on ultrafast switching dynamics were limited to nanosecond timescales, hindering understanding of frequency cross-talk reduction.
Purpose of the Study:
- To investigate ultrafast switch-on dynamics, mode competition, and frequency selection in monolithic frequency-tuneable lasers.
- To observe and analyze mode hopping on picosecond timescales and the transition from transient multi-mode to steady-state single-mode emission.
Main Methods:
- Utilized coherent time-domain sampling of laser emission for high-resolution measurements.
- Employed a comprehensive multi-mode, temperature-dependent carrier and photon transport model to explain observed phenomena.
Main Results:
- Observed picosecond-timescale hopping between lasing modes.
- Characterized the temporal evolution from transient multi-mode to steady-state single-mode emission.
- Demonstrated that frequency-switching timescales are fundamentally limited by the laser cavity's Vernier alignment.
Conclusions:
- Coherent time-domain sampling provides unprecedented insight into ultrafast laser dynamics.
- Understanding these picosecond dynamics is essential for optimizing laser performance and minimizing frequency cross-talk in advanced optical systems.
- The Vernier alignment critically influences the ultimate speed of frequency switching in these lasers.
Related Concept Videos
Semiconductors
1.6K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.6K
Switching of BJT
866
Switching behavior in Bipolar Junction Transistors (BJTs) is a fundamental aspect utilized in various electronic circuits, particularly for digital logic applications like switches and amplifiers. In a typical switching circuit, a BJT alternates between cut-off and saturation modes, corresponding to the "off" and "on" states, respectively, thus behaving like an ideal switch.
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
Cut-off Mode ("Off" State): In this state, both the emitter-base and collector-base junctions are...
866
Types of Semiconductors
1.5K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.5K
Metal-Semiconductor Junctions
1.1K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.1K
Biasing of Metal-Semiconductor Junctions
616
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
616
Frequency-dependent Selection
24.1K
When the fitness of a trait is influenced by how common it is (i.e., its frequency) relative to different traits within a population, this is referred to as frequency-dependent selection. Frequency-dependent selection may occur between species or within a single species. This type of selection can either be positive—with more common phenotypes having higher fitness—or negative, with rarer phenotypes conferring increased fitness.
24.1K

