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Next-Generation Narrow-Band Green-Emitting RbLi(Li3 SiO4 )2 :Eu2+ Phosphor for Backlight Display Application
Ming Zhao1, Hongxu Liao1, Lixin Ning2
1The Beijing Municipal Key Laboratory of New Energy Materials and Technologies, School of Materials Sciences and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China.
Abstract:
The discovery of high efficiency narrow-band green-emitting phosphors is a major challenge in backlighting light-emitting diodes (LEDs). Benefitting from highly condensed and rigid framework structure of UCr4 C4 -type compounds, a next-generation narrow green emitter, RbLi(Li3 SiO4 )2 :Eu2+ (RLSO:Eu2+ ), has emerged in the oxide-based family with superior luminescence properties. RLSO:Eu2+ phosphor can be efficiently excited by GaN-based blue LEDs, and shows green emission at 530 nm with a narrow full width at half maximum of 42 nm, and very low thermal quenching (103%@150 °C of the integrated emission intensity at 20 °C), however its chemical stability needs to be improved later. The white LED backlight using optimized RLSO:8%Eu2+ phosphor demonstrates a high luminous efficacy of 97.28 lm W-1 and a wide color gamut (107% National Television System Committee standard (NTSC) in Commission Internationale de L'Eclairage (CIE) 1931 color space), suggesting its great potential for industrial applications as liquid crystal display (LCD) backlighting.
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