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Impact of source doping on the performance of vertical InAs/InGaAsSb/GaSb nanowire tunneling field-effect transistors

Elvedin Memisevic1, Johannes Svensson1, Erik Lind1

  • 1Department of Electrical and Information Technology, Lund University, Lund SE-221 00, Sweden.

Nanotechnology
|August 10, 2018
PubMed

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