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Atomic Layer Etching: Rethinking the Art of Etch.

Keren J Kanarik1, Samantha Tan1, Richard A Gottscho1

  • 1Lam Research Corporation , Fremont , California 94538 , United States.

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|August 11, 2018
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Atomic layer etching (ALE) is a cutting-edge technique that leverages plasma to achieve high speeds. This advanced method offers a surface smoothing effect and, when combined with atomic layer deposition (ALD), addresses challenges in sub-10 nm technology nodes.

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Area of Science:

  • Materials Science
  • Chemical Engineering
  • Nanotechnology

Background:

  • Conventional etching techniques face limitations in precision and speed.
  • Atomic layer etching (ALE) has evolved from a slow process to a highly efficient method.
  • Understanding the fundamental principles of etching is crucial for developing advanced techniques.

Purpose of the Study:

  • To provide a comprehensive perspective on Atomic Layer Etching (ALE).
  • To compare ALE with traditional etching methods.
  • To highlight the advancements and benefits of ALE, including its synergy with Atomic Layer Deposition (ALD).

Main Methods:

  • Comparative analysis of ALE and conventional etching techniques.
  • Discussion of plasma-enhanced ALE for increased speed.
  • Case study using Silicon (Si) and exploring prospects for other materials like Carbon (C), Tantalum (Ta), Tungsten (W), and Ruthenium (Ru).

Main Results:

  • Plasma-enhanced ALE achieves speeds a thousand times faster than earlier methods.
  • ALE demonstrates a significant 'smoothing effect,' leading to flatter surfaces.
  • ALE shows promise for strongly bound materials beyond Silicon.

Conclusions:

  • ALE is a pivotal technology for advanced semiconductor manufacturing.
  • The combination of ALE and Atomic Layer Deposition (ALD) is essential for addressing challenges at sub-10 nm technology nodes.
  • ALE offers unique advantages, including surface planarization, with broad applicability.