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The Double-H Maze: A Robust Behavioral Test for Learning and Memory in Rodents
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Artificial Synaptic Emulators Based on MoS2 Flash Memory Devices with Double Floating Gates.

Sum-Gyun Yi, Myung Uk Park, Sung Hyun Kim

    ACS Applied Materials & Interfaces
    |August 15, 2018
    PubMed
    Summary
    This summary is machine-generated.

    Molybdenum disulfide (MoS2) flash memory devices with double floating gates emulate biological synapses. Devices on gold (Au) and palladium (Pd) substrates show enhanced synaptic plasticity, paving the way for flexible synaptic electronics.

    Keywords:
    MoS2double floating gateflash memory deviceneuromorphicsynaptic emulator

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    Area of Science:

    • Materials Science
    • Nanotechnology
    • Neuroscience

    Background:

    • Biological synapses exhibit complex plasticity crucial for learning and memory.
    • Existing artificial synaptic devices often struggle with symmetric and linear conductance modulation.
    • Molybdenum disulfide (MoS2) and hexagonal boron nitride (hBN) are promising 2D materials for electronic applications.

    Purpose of the Study:

    • To fabricate MoS2-based flash memory devices capable of emulating biological synaptic functions.
    • To investigate the impact of substrate materials (Au, Pd) on synaptic emulation performance.
    • To demonstrate the potential of these devices for flexible synaptic electronics.

    Main Methods:

    • Fabrication of MoS2/hBN heterostructures on hBN/Au and hBN/Pd substrates.
    • Characterization of device performance in emulating synaptic plasticity (potentiation, depression, spike-rate, spike-timing dependent plasticity).
    • Analysis of electron transfer mechanisms within the double floating gate structure.

    Main Results:

    • MoS2-based flash memory devices successfully emulated various biological synaptic functions.
    • Devices fabricated on hBN/Au substrates exhibited significantly more symmetric and linear bidirectional conductance changes compared to devices on hBN alone.
    • Similar enhanced performance was observed for devices fabricated on hBN/Pd substrates, suggesting the role of the double floating gate structure and inter-layer electron transfer.

    Conclusions:

    • MoS2-based flash memory devices with double floating gates can effectively emulate complex synaptic behaviors.
    • The incorporation of specific metallic substrates (Au, Pd) enhances the linearity and symmetry of conductance modulation.
    • These findings highlight the potential for developing flexible synaptic electronics using MoS2-based materials.