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    Area of Science:

    • Optical Engineering
    • Semiconductor Manufacturing Technology

    Background:

    • Extreme ultraviolet (EUV) lithography is critical for advanced semiconductor manufacturing.
    • Developing efficient design procedures for EUV lithography tools is essential for technological advancement.

    Purpose of the Study:

    • To establish a systematic design procedure for extreme ultraviolet (EUV) lithography tools.
    • To create a method that ensures optical system properties meet stringent requirements during the design phase.

    Main Methods:

    • Utilizing generalized Gaussian constants for optical analysis.
    • Deriving relationships between optical properties and design requirements.
    • Applying the developed procedure to a practical tool design.

    Main Results:

    • A systematic design procedure for EUV lithography tools has been successfully developed.
    • The analysis using generalized Gaussian constants effectively links optical properties to tool requirements.
    • An eight-mirror, 0.4 numerical aperture (NA) EUV lithography tool design was demonstrated as verification.

    Conclusions:

    • The proposed systematic design procedure is effective for developing advanced EUV lithography tools.
    • The method facilitates the assurance of critical optical system properties throughout the design process.
    • This approach aids in the reliable creation of high-performance lithography systems for semiconductor fabrication.