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Related Concept Videos

Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Factors Affecting Dissolution: Polymorphism, Amorphism and Pseudopolymorphism01:21

Factors Affecting Dissolution: Polymorphism, Amorphism and Pseudopolymorphism

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Polymorphism refers to the existence of a drug substance in multiple crystalline forms, known as polymorphs. Recently, this term has been expanded to include solvates (forms containing a solvent), amorphous forms (non-crystalline forms), and desolvated solvates (forms from which the solvent has been removed).
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Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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Classifying Matter by Composition03:35

Classifying Matter by Composition

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Matter: Pure Substances and Mixtures
According to its composition, the matter can be classified into two broad categories — pure substances and mixtures. 
A pure substance is a form of matter that has a constant composition throughout with uniform properties. For example, any sample of sucrose has the same composition and same physical properties, such as melting point, color, and sweetness, regardless of the source from which it is isolated. 
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
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Compositionally controlled plasmonics in amorphous semiconductor metasurfaces.

Davide Piccinotti, Behrad Gholipour, Jin Yao

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    Amorphous bismuth telluride (Bi:Te) thin films offer a CMOS-compatible material for plasmonics. Their composition tunes the plasmonic response across ultraviolet-visible wavelengths, enabling novel nanophotonic applications.

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    Area of Science:

    • Materials Science
    • Nanotechnology
    • Optics

    Background:

    • Plasmonics enables light manipulation at the nanoscale.
    • Existing plasmonic materials often lack CMOS compatibility or tuneability.
    • A need exists for new materials for ultraviolet-visible plasmonics.

    Purpose of the Study:

    • To investigate amorphous bismuth telluride (Bi:Te) as a CMOS-compatible plasmonic material.
    • To determine the composition-dependent plasmonic response of Bi:Te thin films.
    • To demonstrate the plasmonic properties through nano-grating metasurfaces.

    Main Methods:

    • High-throughput physical vapor deposition for thin film synthesis.
    • Characterization techniques to determine material properties and plasmonic response.
    • Fabrication of subwavelength nano-grating metasurfaces.

    Main Results:

    • Amorphous Bi:Te exhibits a plasmonic response (negative real permittivity) from ~250 nm to 530-978 nm.
    • The plasmonic band edge is tunable by adjusting the Bi:Te alloy composition.
    • Nano-grating metasurfaces showed strong, period-dependent plasmonic absorption resonances.

    Conclusions:

    • Amorphous Bi:Te is a promising material for ultraviolet-visible plasmonics.
    • Composition control allows tuning of plasmonic properties.
    • Demonstrated potential for creating color effects in nanostructured materials.